Intellectual Property

About MoSys, Inc.

Founded in 1991, MoSys® develops, markets and licenses differentiated embedded memory and high speed parallel and serial interface IP for advanced SoC designs. MoSys' patented 1T-SRAM® and 1T-Flash® memory technologies offer a combination of high density, low power consumption, high speed and low cost advantages that are unmatched by other available memory technologies for a variety of networking, computing, storage and consumer/graphics applications.

MoSys' silicon-proven interface IP portfolio includes DDR3/2 Combo PHYs, as well as SerDes IP that support data rates from 1 Gigabit per second (Gbps) to 11Gbps, across a wide range of standards, including PCI-Express, XAUI, SATA, USB and 10G KR. MoSys IP has been production-proven in more than 190 million devices.

MoSys was founded in 1991 and had its initial public offering in 2001 (Nasdaq: MOSY). The MoSys executive team consists of semiconductor veterans with a combined 125 years of industry experience. The company is headquartered in Sunnyvale, California.

For more information about the company, visit www.mosys.com .