Single-Port SRAM & Dual-Port SRAM

Custom SRAMs

eSilicon has designed single-port and two-port SRAMs catering to a wide variety of market segments.

Grade 0 Automotive Applications

Automotive application customers rely on eSilicon’s high-reliability SRAMs for Grade 0 automotive applications. eSilicon has developed a custom low-leakage bit cell that has been used in SRAMs targeting automotive applications. These SRAMs are functional at high temperatures such as 175° C and have enabled our automotive application customers to create significant competitive advantages.

Ultra-Low-Voltage and Ultra-Low-Power SRAMs for the IoT Spectrum

It’s undeniable that we are surrounded by a network of “things” embedded with electronics to make them “smart.” These devices are mostly on and listening to incoming data. Therefore, optimizing for very low voltage and power is critical for maintaining long battery life. Internet of Things (IoT) medical and wearables customers benefit from eSilicon’s ultra-low-power and ultra-low-voltage SRAMs for these extreme requirements.

High-Speed SRAMs for Networking and Big Data Analytics

IoT is expected to generate large amounts of data from the plethora of “things” from diverse industries and locations, thereby increasing the need for improved performance and bandwidth in networking and communications. Networking and communications customers rely on the performance of eSilicon’s high-speed SRAMs at 40nm, 28nm, 16nm and 14nm to meet the demanding wireline speed requirements of networking applications and the sophisticated cloud-based processing of Big Data.

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Please contact us at ipbu@esilicon.com for technical documentation or if you would like to learn more about our custom memory IP and I/O offering.

Low-Power, High-Performance SRAMs for Wireless and Handheld

Wireless and handheld customers engage with eSilicon to develop low-power, high-performance SRAMs that can meet the long battery life requirements of wireless and handheld devices, while at the same time deliver the level of performance required by state-of-the-art devices such as smart phones.

eSilicon’s philosophy for developing memories is to customize the memories to end-customer requirements. This usually involves turning multiple knobs to tune the area, power, and performance of SRAMs to meet application requirements. The chart below shows some of the elements that eSilicon has successfully used in the past to meet customer targets.

Custom SRAM Elements

Area Performance Power Management Testability Functional Options
  • Aspect Ratio
  • Side Decode
  • Push-Rule Bit Cell
  • Low Vt for Highest Performance
  • Banking
  • Center Decode
  • Array Source Biasing
  • Periphery Shutdown
  • Complete Shutdown
  • Dual Rail
  • DVFS
  • Mixed Vt Periphery
  • High Vt Periphery
  • BIST Mux
  • Scan Flops
  • Synchronous Bypass
  • Read Stress
  • Write Stress
  • Column Redundancy
  • Row Redundancy
  • Bit Write
  • Pipelined Output

Please contact us at ipbu@esilicon.com if you would like to learn more about our custom IP offering.

Search, select and try eSilicon® IP online at no cost or obligation. Find out more about eSilicon Navigator (formerly IP MarketPlace).